RJK0853DPB-00#J5
MOSFET N-CH 80V 40A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK0853DPB-00-J5 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 80 V and supports a continuous drain current (Id) of 40 A at 25°C. With a maximum On-Resistance (Rds On) of 8 mOhm at 20 A and 10 Vgs, it ensures efficient power transfer. The device boasts a low gate charge of 40 nC at 4.5 V and an input capacitance (Ciss) of 6170 pF at 10 V. The RJK0853DPB-00-J5 is housed in a space-efficient LFPAK package, suitable for surface mounting, and operates within a temperature range of 150°C (TJ). Its power dissipation capability is rated at 65 W (Tc). This MOSFET is widely utilized in power supply units, automotive systems, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6170 pF @ 10 V |
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