RJK0703DPP-A0#T2
MOSFET N-CH 75V 70A TO220FPAManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0703DPP-A0-T2 is an N-Channel Trench MOSFET designed for power switching applications. This device features a drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) of 70 A at 25°C, with a maximum power dissipation of 25 W. The Rds(on) is specified at a maximum of 6.7 mOhm at 35 A and 10 V gate drive voltage. Key parameters include a gate charge (Qg) of 56 nC and input capacitance (Ciss) of 4150 pF, both measured at 10 V. The RJK0703DPP-A0-T2 utilizes advanced MOSFET technology and is packaged in a TO-220ABA through-hole configuration, suitable for industrial and automotive power management systems. The maximum operating junction temperature is 150°C, with a gate-source voltage (Vgs) tolerance of +/- 20 V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220ABA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 10 V |
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