RJK0703DPN-E0#T2
MOSFET N-CH 75V 70A TO220ABManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0703DPN-E0-T2 is an N-Channel Power MOSFET. This component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain current (Id) of 70A at 25°C. The Rds On is specified at a maximum of 6.7mOhm when conducting 35A with a 10V gate-source voltage. The device offers a low gate charge of 56 nC at 10V and an input capacitance (Ciss) of 4150 pF at 10V. With a maximum power dissipation of 125W (Tc) and an operating junction temperature of 150°C, this MOSFET is designed for demanding applications. It is housed in a TO-220AB through-hole package and is supplied in tubes. This component is suitable for use in power supply, automotive, and industrial applications requiring robust switching performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 10 V |
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