RJK0702DPN-E0#T2
MOSFET N-CH 75V 90A TO220ABManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0702DPN-E0-T2 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 75 V and a continuous Drain Current (Id) of 90 A at 25°C (Ta). With a low on-resistance of 4.8 mOhm at 45 A and 10 V (Vgs), it offers efficient power handling. The device is housed in a TO-220AB through-hole package, supporting a maximum power dissipation of 150 W (Tc). Key electrical characteristics include an input capacitance (Ciss) of 6450 pF at 10 V and a gate charge (Qg) of 89 nC at 10 V. The operating junction temperature (TJ) is rated up to 150°C. This MOSFET is commonly employed in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 10 V |
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