RJK0701DPP-E0#T2
MOSFET N-CH 75V 100A TO220FPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK0701DPP-E0-T2 is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 75 V and a continuous drain current (Id) of 100A at 25°C, this component offers robust performance. Its low on-resistance (Rds On) of 3.8mOhm at 50A and 10V, coupled with a maximum power dissipation of 30W (Tc), makes it suitable for power conversion and control systems. The MOSFET is housed in a TO-220FP package, readily mountable via through-hole technology. Key electrical characteristics include a gate charge (Qg) of 140 nC at 10 V and input capacitance (Ciss) of 10000 pF at 10 V. This device operates effectively at junction temperatures up to 150°C and finds utility in industrial power supplies, automotive electronics, and high-power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220FP |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 10 V |
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