RJK0701DPN-E0#T2
MOSFET N-CH 75V 100A TO220ABManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's RJK0701DPN-E0-T2 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 100A at 25°C. With a low on-resistance (Rds On) of 3.8mOhm at 50A and 10V, it minimizes conduction losses. The RJK0701DPN-E0-T2 offers a maximum power dissipation of 200W (Tc) and operates across a junction temperature range of -55°C to 150°C. It is packaged in a standard TO-220AB through-hole package, facilitating ease of assembly. This component is commonly utilized in power supply units, motor control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10 pF @ 10 V |
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