RJK0657DPA-00#J5A
MOSFET N-CH 60V 20A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK0657DPA-00-J5A is a high-performance N-Channel Power MOSFET designed for demanding applications. This surface mount device features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at 25°C (Ta). With a maximum power dissipation of 45W (Tc), it is suitable for power delivery and switching functions. The RJK0657DPA-00-J5A exhibits a low on-resistance (Rds On) of 13.6mOhm at 10A and 10V, minimizing conduction losses. Key electrical characteristics include an input capacitance (Ciss) of 1000pF at 10V and a gate charge (Qg) of 16nC at 10V. This MOSFET operates within a junction temperature range of 150°C and is housed in an 8-WPAK package with an exposed pad for enhanced thermal management. Its robust specifications make it ideal for use in automotive, industrial power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.6mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |
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