RJK0603DPN-A0#T2
MOSFET N-CH 60V 80A TO220ABAManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0603DPN-A0-T2 is a through-hole N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 60V and offers a continuous drain current (Id) capability of 80A at 25°C. The Rds On is specified at a maximum of 5.2mOhm at 40A and 10V gate drive, with a nominal gate charge (Qg) of 57nC at 10V. Input capacitance (Ciss) is 4150pF maximum at 10V. The device is housed in a TO-220ABA package, enabling a maximum power dissipation of 125W. It is suitable for use in industrial automation, power supplies, and electric vehicle charging systems. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220ABA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 10 V |
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