RJK0602DPN-E0#T2
MOSFET N-CH 60V 110A TO220ABManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0602DPN-E0-T2 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 110A at 25°C. The low on-resistance (Rds On) of 3.9mOhm at 50A and 10V drive ensures minimal conduction losses. With a maximum power dissipation of 150W (Tc), it is suitable for demanding thermal environments. The TO-220AB package facilitates through-hole mounting and efficient heat dissipation. Key parameters include a gate charge (Qg) of 90 nC @ 10V and input capacitance (Ciss) of 6450 pF @ 10V, critical for optimizing switching performance. This MOSFET finds application in power supplies, motor drives, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 10 V |
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