RJK0451DPB-00#J5
MOSFET N-CH 40V 35A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0451DPB-00-J5 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C. The Rds On is specified at a maximum of 7mOhm at 17.5A and 10V gate drive voltage, with a drive voltage range of 4.5V to 10V. With a maximum gate charge (Qg) of 14 nC at 4.5V and input capacitance (Ciss) of 2010 pF at 10V, it is suitable for demanding switching applications. The component offers a power dissipation of 45W (Tc) and operates up to 150°C (TJ). Packaged in the compact LFPAK (SC-100, SOT-669), it is supplied on tape and reel. This MOSFET finds application in power supplies, motor control, and battery management systems within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 10 V |
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