RJK03N6DPA-00#J5A
MOSFET N-CH 30V 40A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation's RJK03N6DPA-00-J5A is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 40A at 25°C, with a maximum power dissipation of 35W (Tc). The low on-resistance, specified at 3.8mOhm at 20A and 10V, ensures efficient power transfer. Key electrical characteristics include a gate charge of 19 nC (max) at 4.5V and an input capacitance of 3220 pF (max) at 10V. Packaged in a compact 8-WPAK (8-WFDFN Exposed Pad) for surface mounting, this MOSFET operates reliably up to 150°C (TJ). It finds utility in power management, automotive, and industrial systems requiring robust switching performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 10 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
RJK1001DPN-E0#T2
MOSFET N-CH 100V 80A TO220AB
