RJK03M9DNS-00#J5
MOSFET N-CH 30V 14A 8HWSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK03M9DNS-00-J5 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 14A at 25°C ambient. Its low on-resistance of 11.1mOhm at 7A and 10V gate-source voltage ensures efficient power transfer. The RJK03M9DNS-00-J5 is housed in an 8-HWSON (3.3x3.3) package, offering a compact footprint for surface mounting. With a maximum power dissipation of 10W (Tc) and an operating junction temperature of 150°C, this MOSFET is suitable for power management solutions in automotive and industrial sectors. Key electrical characteristics include a gate charge of 6 nC (max) at 4.5V and input capacitance of 980 pF (max) at 10V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 10W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 10 V |
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