RJK03M8DNS-00#J5
MOSFET N-CH 30V 30A 8HWSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK03M8DNS-00-J5 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage and a continuous drain current capability of 30A at 25°C ambient temperature, with a maximum power dissipation of 20W at the case temperature. The low on-resistance of 5.2mOhm at 15A and 10V gate-source voltage is achieved through advanced MOSFET technology. Key parameters include a gate charge of 14.5 nC at 4.5V and an input capacitance of 2590 pF at 10V. The RJK03M8DNS-00-J5 is housed in an 8-HWSON (3.3x3.3) surface mount package, suitable for high-density board designs. It operates reliably up to a junction temperature of 150°C. This component finds application in various sectors including industrial automation and power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2590 pF @ 10 V |
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