RJK03M7DPA-00#J5A
MOSFET N-CH 30V 30A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK03M7DPA-00-J5A is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 30 A at 25°C ambient temperature. The Rds(on) is specified as a maximum of 9.6 mOhm at 15 A and 10 V Vgs. With a maximum power dissipation of 25 W (Tc), it is suitable for demanding applications. The component is housed in a surface mount 8-WPAK (8-WFDFN Exposed Pad) package, facilitating efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 6.6 nC at 4.5 V Vgs and an input capacitance (Ciss) of 1120 pF at 10 V Vds. This MOSFET is utilized in power supply units, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 10 V |
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