RJK03M6DNS-00#J5
MOSFET N-CH 30V 16A 8HWSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK03M6DNS-00-J5 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 16A at 25°C. The device exhibits a low on-resistance of 9.2mOhm at 8A and 10V Vgs, with a maximum gate charge of 7.1 nC at 4.5V. Its input capacitance (Ciss) is rated at 1190 pF maximum at 10V Vds. The RJK03M6DNS-00-J5 is housed in a compact 8-HWSON (3.3x3.3) surface mount package, offering a maximum power dissipation of 12.5W (Tc) and an operating junction temperature of 150°C. This MOSFET is suitable for use in power management, automotive systems, and industrial equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 12.5W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 10 V |
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