RJK03E1DNS-00#J5
POWER FIELD-EFFECT TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 30 V 25A (Ta) 15W (Tc) Surface Mount 8-HWSON (3.3x3.3)
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 10 V |
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