RJK03E0DNS-00#J5
POWER FIELD-EFFECT TRANSISTORManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK03E0DNS-00-J5 is an N-Channel power MOSFET designed for demanding applications. This surface mount device features a Drain-to-Source Voltage (Vdss) of 30 V and supports a continuous drain current (Id) of 30 A at 25°C (Ta). The Rds On is specified at a maximum of 5.6 mOhm at 15 A and 10 V. With a maximum power dissipation of 20 W (Tc) and an operating junction temperature of 150°C, this component is suitable for power management solutions. The device is housed in an 8-HWSON (3.3x3.3) package, offering a compact footprint. Key electrical characteristics include a Gate Charge (Qg) of 15.2 nC at 4.5 V and an Input Capacitance (Ciss) of 3050 pF at 10 V. This MOSFET is utilized in industries such as automotive and industrial power systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3050 pF @ 10 V |
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