RJK03C1DPB-00#J5
MOSFET N-CH 30V 60A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK03C1DPB-00-J5 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and supports a continuous drain current of 60A at 25°C ambient temperature. The Rds(on) is specified at a maximum of 2.2mOhm at 30A and 10V Vgs. With a gate charge of 42nC at 4.5V, it offers efficient switching characteristics. The MOSFET is housed in a compact LFPAK package (SC-100, SOT-669) suitable for surface mounting. Power dissipation is rated at 65W (Tc), and it operates across a temperature range of -55°C to 150°C (TJ). This component includes a beneficial Schottky diode integrated within the body. Applications include automotive, industrial power systems, and power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 10 V |
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