RJK03C0DPA-00#J53
MOSFET N-CH 30V 70A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation RJK03C0DPA-00-J53 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 70A at 25°C. With a low on-resistance of 2mOhm at 35A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 65W (Tc) and a gate charge of 66 nC at 4.5V. Its input capacitance (Ciss) is a maximum of 11000 pF at 10V. Packaged in an 8-WPAK surface mount configuration, this MOSFET is suitable for demanding applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Ta) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 10 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
