RJK03B9DPA-00#J5A
MOSFET N-CH 30V 30A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK03B9DPA-00-J5A is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 30A at 25°C ambient temperature, with a maximum power dissipation of 25W at 25°C case temperature. The Rds(on) is specified at a maximum of 10.6mOhm when conducting 15A with a 10V gate-source voltage. Key electrical characteristics include an input capacitance (Ciss) of 1110pF at 10V and a gate charge (Qg) of 7.4nC at 4.5V. The RJK03B9DPA-00-J5A is housed in a surface-mount 8-WPAK package and operates within a temperature range of 150°C. This MOSFET is suitable for use in power management solutions across various industries, including automotive and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 10 V |
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