RJK03B9DPA-00#J53
MOSFET N-CH 30V 30A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK03B9DPA-00-J53 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 30A at 25°C ambient temperature, with a power dissipation capability of 25W at 25°C case temperature. The device exhibits a low on-resistance of 10.6mOhm maximum at 15A and 10V Vgs. Key electrical characteristics include a gate charge of 7.4 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 1110 pF maximum at 10V Vds. The RJK03B9DPA-00-J53 is housed in an 8-WPAK surface-mount package, suitable for demanding thermal management. This MOSFET is utilized in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 10 V |
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