RJK03B7DPA-00#J5A
MOSFET N-CH 30V 30A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK03B7DPA-00-J5A is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 30A at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 7.8mOhm at 15A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 30W at 25°C (Tc), it is suitable for demanding thermal environments. The MOSFET is housed in a compact 8-WPAK surface-mount package, facilitating dense board layouts. Key electrical characteristics include an input capacitance (Ciss) of 1670pF at 10V and a gate charge (Qg) of 11nC at 4.5V, optimizing switching performance. This component is utilized across various industries, including automotive and industrial power management systems, where efficient power conversion is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 10 V |
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