RJK03B7DPA-00#J53
MOSFET N-CH 30V 30A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK03B7DPA-00-J53 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 30A at 25°C (Ta), with a maximum power dissipation of 30W (Tc). The RJK03B7DPA-00-J53 offers a low on-resistance of 7.8mOhm at 15A and 10V (Vgs), crucial for minimizing conduction losses. It utilizes advanced MOSFET technology for optimal performance and is housed in an 8-WPAK (8-PowerWDFN) surface mount package, facilitating compact board designs. Key electrical parameters include a gate charge (Qg) of 11nC (max) at 4.5V and an input capacitance (Ciss) of 1670pF (max) at 10V (Vds). This device is suitable for use in power management solutions, automotive systems, and industrial automation.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 10 V |
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