RJK0397DPA-00#J53
MOSFET N-CH 30V 30A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation RJK0397DPA-00-J53 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 30A at 25°C. The device offers a low on-resistance (Rds On) of 10.1mOhm at 15A and 10V, contributing to high efficiency. With a maximum power dissipation of 25W at the case temperature, it is suitable for thermal management in power-intensive designs. The RJK0397DPA-00-J53 is packaged in an 8-WPAK (8-PowerWDFN) for surface mounting. Key electrical characteristics include an input capacitance (Ciss) of 1110pF at 10V and a gate charge (Qg) of 7.4nC at 4.5V. This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.1mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 10 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
