RJK0395DPA-00#J5A
MOSFET N-CH 30V 30A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation RJK0395DPA-00-J5A is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 30A at 25°C (Ta). With a low on-resistance (Rds On) of 7.7 milliohms at 15A and 10V (Vgs), it minimizes conduction losses. The device offers a maximum power dissipation of 30W (Tc) and operates efficiently at junction temperatures up to 150°C. Key electrical characteristics include an input capacitance (Ciss) of 1670 pF (Max) at 10V (Vds) and a gate charge (Qg) of 11 nC (Max) at 4.5V (Vgs). The RJK0395DPA-00-J5A is housed in an 8-WPAK package with an exposed pad for enhanced thermal performance, making it suitable for surface mount applications in power management and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 10 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
