RJK0395DPA-00#J53
MOSFET N-CH 30V 30A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation RJK0395DPA-00-J53 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 30A at 25°C ambient temperature. With a low on-resistance of 7.7mOhm (max) at 15A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 30W (Tc) and is packaged in an 8-WPAK (Supplier Device Package: 8-PowerWDFN) for effective thermal management in surface mount configurations. Key electrical characteristics include a gate charge (Qg) of 11 nC (max) at 4.5V and input capacitance (Ciss) of 1670 pF (max) at 10V. This MOSFET is suitable for use in automotive, industrial, and high-power DC-DC conversion systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 10 V |
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