RJK0393DPA-00#J53
MOSFET N-CH 30V 40A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's RJK0393DPA-00-J53 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30 V drain-source voltage and a continuous drain current capability of 40A at 25°C, with a maximum power dissipation of 40W at the case temperature. The low on-resistance of 4.3mOhm at 20A and 10V gate-source voltage ensures efficient power transfer.
Key electrical characteristics include a gate charge of 21 nC (max) at 4.5 V and an input capacitance of 3270 pF (max) at 10 V drain-source voltage. Packaged in an 8-WPAK (8-PowerWDFN) for surface mounting, this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 10 V |
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