RJK0391DPA-00#J5A
MOSFET N-CH 30V 50A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation N-Channel Power MOSFET, part number RJK0391DPA-00-J5A. This surface mount device features a 30V drain-source voltage and a continuous drain current of 50A at 25°C (Ta). The Rds On is specified at a maximum of 2.9mOhm at 25A, 10V. Gate charge (Qg) is 34 nC at 4.5V, with input capacitance (Ciss) at 5600 pF at 10V. The MOSFET supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. It operates at an ambient temperature of 150°C (TJ) and offers a power dissipation of 50W (Tc). The device is housed in an 8-WPAK (3) package and is supplied on tape and reel. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-WPAK (3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 10 V |
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