RJK0390DPA-00#J5A
MOSFET N-CH 30V 65A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK0390DPA-00-J5A is an N-Channel MOSFET designed for high-performance power applications. This surface mount device features a 30V drain-to-source voltage (Vdss) and a continuous drain current capability of 65A at 25°C (Ta), with a maximum power dissipation of 60W (Tc). The RJK0390DPA-00-J5A offers a low on-resistance of 2.2mOhm at 32.5A and 10V (Vgs), contributing to efficient power management. Key electrical characteristics include an input capacitance (Ciss) of 8900 pF at 10V (Vds) and a gate charge (Qg) of 54 nC at 4.5V (Vgs). Operating at an ambient temperature up to 150°C (TJ), this MOSFET is housed in an 8-WPAK (8-WFDFN Exposed Pad) package. It finds application in power supply units, automotive systems, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 32.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 10 V |
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