RJK0390DPA-00#J53
MOSFET N-CH 30V 65A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK0390DPA-00-J53 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. It features a 30V drain-source voltage rating and a continuous drain current capability of 65A at 25°C ambient. The device offers a low on-resistance of 2.2mOhm maximum at 32.5A and 10V Vgs, minimizing conduction losses. With a maximum power dissipation of 60W at 25°C case temperature, it is suitable for demanding thermal environments. The RJK0390DPA-00-J53 utilizes a surface mount 8-WPAK package, facilitating efficient heat transfer and compact board designs. Key electrical parameters include a gate charge of 54 nC at 4.5V Vgs and an input capacitance of 8900 pF at 10V Vds. This component is commonly employed in automotive power management, industrial power supplies, and consumer electronics.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 32.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 10 V |
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