RJK0379DPA-00#J5A
MOSFET N-CH 30V 50A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0379DPA-00-J5A is a 30V N-Channel Power MOSFET for high-efficiency power conversion applications. This device features a low on-resistance of 2.3mOhm at 25A and 10V, facilitating reduced conduction losses. With a continuous drain current capability of 50A (Ta) and a maximum power dissipation of 55W (Tc), it is suitable for demanding automotive and industrial power management systems. The component utilizes Metal Oxide technology and is housed in a 8-WPAK surface mount package with an exposed pad for enhanced thermal performance, operating at junction temperatures up to 150°C. Key electrical characteristics include a gate charge of 37 nC (Max) @ 4.5V and input capacitance of 5150 pF (Max) @ 10V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 10 V |
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