RJK0366DPA-02#J0B
MOSFET N-CH 30V 25A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation RJK0366DPA-02-J0B is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 25A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 10mOhm maximum at 12.5A and 10V, along with a maximum power dissipation of 30W (Tc). Key electrical parameters include a gate charge (Qg) of 6.8 nC maximum at 4.5V and an input capacitance (Ciss) of 1010 pF maximum at 10V. The RJK0366DPA-02-J0B utilizes surface mount technology, housed in an 8-WPAK (8-WFDFN Exposed Pad) package, and operates at temperatures up to 150°C (TJ). This MOSFET is suitable for use in automotive, industrial power supplies, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 10 V |
Request a Quote
Clients Also Buy
RJK0389DPA-WS#J53
POWER TRANSISTOR, MOSFET
HAT2173HWS-E
MOSFET N-CH 100V 25A 5LFPAK
NP40N10YDF-E1-AY
MOSFET N-CH 100V 40A 8HSON
