RJK0366DPA-00#J0
MOSFET N-CH 30V 25A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0366DPA-00-J0 is an N-Channel Power MOSFET designed for demanding applications. This surface mount device features a 30V drain-source breakdown voltage and a continuous drain current capability of 25A at 25°C ambient temperature. The RJK0366DPA-00-J0 exhibits a low on-resistance of 11.1mOhm at 12.5A and 10V Vgs, contributing to efficient power handling. With a maximum power dissipation of 30W at 25°C case temperature, it is suitable for power conversion and management circuits. Key electrical parameters include a gate charge of 6.8 nC (max) at 10V Vgs and an input capacitance (Ciss) of 1010 pF (max) at 10V Vds. The component is housed in an 8-WPAK (3) package, facilitating robust thermal performance and integration into compact designs. This MOSFET finds application in automotive systems and industrial power solutions.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK (3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 10 V |
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