RJK0355DPA-01#J0B
MOSFET N-CH 30V 30A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0355DPA-01-J0B, an N-Channel Power MOSFET, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C ambient. This device features a low on-resistance of 10.7mOhm maximum at 15A and 10V Vgs, enabling efficient power switching. With a maximum power dissipation of 25W at 25°C case temperature, it is suitable for demanding applications. The RJK0355DPA-01-J0B utilizes a surface mount 8-WPAK package, facilitating high-density board designs. Key electrical parameters include a gate charge of 6.3 nC at 4.5V Vgs and input capacitance of 860 pF at 10V Vds. This MOSFET is commonly employed in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 10 V |
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