RJK0353DPA-WS#J0B
MOSFET N-CH 30V 35A WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation N-Channel Power MOSFET, RJK0353DPA-WS-J0B. This device features a 30V drain-source voltage and 35A continuous drain current at 25°C. It offers a low on-resistance of 5.2mOhm maximum at 17.5A, 10V, driven by gate voltages between 4.5V and 10V. The MOSFET is housed in a WPAK(3F) (5x6) surface mount package, providing a maximum power dissipation of 40W. Key parameters include a gate charge of 14nC maximum at 10V and input capacitance of 2180pF maximum at 10V. Operating temperature range is -55°C to 150°C. This component is typically utilized in automotive and industrial power management applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | WPAK(3F) (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 10 V |
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