RJK0351DPA-00#J0
MOSFET N-CH 30V 40A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation RJK0351DPA-00-J0 is a 30V N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a low on-resistance of 4.2 mOhm at 20A and 10V, coupled with a continuous drain current capability of 40A (Ta). The device offers a maximum power dissipation of 45W (Tc) and operates at temperatures up to 150°C (TJ). Its 8-WPAK surface mount package facilitates efficient thermal management. Key electrical characteristics include a gate charge of 17 nC (Max) at 4.5V and an input capacitance (Ciss) of 2560 pF (Max) at 10V. This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors requiring robust power switching.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 10 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
