RJK0349DPA-01#J0B
MOSFET N-CH 30V 45A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's RJK0349DPA-01-J0B is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source voltage and a continuous drain current capability of 45A at 25°C ambient temperature, with a maximum power dissipation of 50W at the case temperature. The RJK0349DPA-01-J0B exhibits a low on-resistance of 3.1mOhm at 22.5A and 10V Vgs, along with a gate charge of 25nC at 4.5V Vgs. It utilizes surface mount technology with an 8-WPAK (8-PowerWDFN) package, operating at temperatures up to 150°C junction. This component is suitable for various industrial applications including power supplies, motor drivers, and battery management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 10 V |
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