RJK0329DPB-01#J0
MOSFET N-CH 30V 55A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's RJK0329DPB-01-J0 is an N-Channel MOSFET designed for high-performance power applications. This device features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of up to 55A at 25°C, with a maximum power dissipation of 60W (Tc). The RJK0329DPB-01-J0 exhibits a low on-resistance of 2.3mOhm at 27.5A and 10V (Vgs), minimizing conduction losses. Key characteristics include a gate charge (Qg) of 35 nC (max) at 4.5V (Vgs) and an input capacitance (Ciss) of 5330 pF (max) at 10V (Vds). The MOSFET is housed in a compact LFPAK package, suitable for surface mounting, and operates reliably up to a junction temperature of 150°C. This component finds utility in industries such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LFPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5330 pF @ 10 V |
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