RJK0328DPB-01#J0
MOSFET N-CH 30V 60A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0328DPB-01-J0 is an N-Channel MOSFET with a drain-source breakdown voltage of 30 V. This device features a continuous drain current capability of 60 A at 25°C and a maximum power dissipation of 65 W at the case temperature. The Rds(on) is specified at 2.1 mOhm maximum for an Id of 30 A and Vgs of 10 V, with a gate drive requirement of 4.5 V and 10 V. Key capacitance parameters include an input capacitance (Ciss) of 6380 pF maximum at 10 V Vds and a gate charge (Qg) of 42 nC maximum at 4.5 V Vgs. The MOSFET is housed in a surface mount LFPAK package (SC-100, SOT-669) and operates at a junction temperature up to 150°C. This component is suitable for applications in automotive, industrial power, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6380 pF @ 10 V |
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