RJK0328DPB-00#J0
MOSFET N-CH 30V 60A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0328DPB-00-J0 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C. The Rds(on) is optimized at a maximum of 2.1mOhm when conducting 30A with a 10V gate-source voltage (Vgs). Key electrical parameters include a gate charge (Qg) of 42 nC (max) at 4.5V Vgs and an input capacitance (Ciss) of 6380 pF (max) at 10V Vds. The RJK0328DPB-00-J0 is housed in a surface-mount LFPAK package (SC-100, SOT-669), facilitating compact board designs. This component is commonly utilized in automotive, industrial power supplies, and battery management systems where robust power handling and low on-resistance are critical.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LFPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6380 pF @ 10 V |
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