RJK0301DPB-WS#J0
MOSFET N-CH 30V 60A 5LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation presents the RJK0301DPB-WS-J0, an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C. With a low on-resistance (Rds On) of 2.8mOhm maximum at 30A and 10V Vgs, it offers efficient power handling. The device supports gate drive voltages from 4.5V to 10V and has a gate charge (Qg) of 32 nC maximum at 10V. Input capacitance (Ciss) is 5000 pF maximum at 10V Vds. The RJK0301DPB-WS-J0 is packaged in a surface-mount LFPAK (SC-100, SOT-669) and can dissipate up to 65W at 25°C (Tc). Operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +16V, -12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 10 V |
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