RJK0301DPB-00#J0
MOSFET N-CH 30V 60A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0301DPB-00-J0 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C ambient temperature, with a maximum power dissipation of 65W at the case temperature. The device exhibits a low on-resistance of 2.8mOhm at 30A and 10V gate-source voltage, minimizing conduction losses. It is supplied in a compact LFPAK (SC-100, SOT-669) surface mount package, facilitating dense board layouts. Key electrical characteristics include a typical input capacitance (Ciss) of 5000pF at 10V and a gate charge (Qg) of 32nC at 4.5V. This MOSFET is commonly utilized in automotive, industrial power supplies, and DC-DC conversion systems demanding robust performance and thermal management.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LFPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 10 V |
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