RJK0236DPA-00#J5A
MOSFET N-CH 25V 50A 8DFNManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0236DPA-00-J5A is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 50 A at 25°C, with a maximum power dissipation of 50 W (Tc). The low on-resistance of 1.8 mOhm @ 25A, 10V ensures minimal conduction losses. With a gate charge (Qg) of 31 nC @ 4.5 V and input capacitance (Ciss) of 6130 pF @ 10 V, it offers excellent switching characteristics. The RJK0236DPA-00-J5A is housed in a compact 8-DFN (5x6) package with an exposed pad for enhanced thermal performance, suitable for surface mounting. Its robust construction allows for operation at up to 150°C (TJ). This MOSFET is commonly utilized in automotive, industrial power supply, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-DFN (5x6) |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6130 pF @ 10 V |
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