RJK0204DPA-00#J53
MOSFET N-CH 25V 50A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0204DPA-00-J53 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 25V drain-source voltage rating and a continuous drain current capability of 50A at 25°C ambient temperature. The device exhibits a low on-resistance of 2.7 mOhm maximum at 25A and 10V Vgs, contributing to reduced conduction losses. Key parameters include a gate charge of 22 nC maximum at 4.5V Vgs and an input capacitance of 4240 pF maximum at 10V Vds. The RJK0204DPA-00-J53 is housed in an 8-WPAK surface mount package, suitable for high-density board layouts. It operates within a junction temperature range of 150°C. This MOSFET is utilized in various demanding applications, including automotive systems and industrial power management.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-WPAK |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4240 pF @ 10 V |
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