RJJ0315DPA-00#J5A
MOSFET P-CH 30V 35AManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJJ0315DPA-00-J5A is a P-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 35A at 25°C (Ta). The RJJ0315DPA-00-J5A offers a low on-resistance of 5.9mOhm at 17.5A and 10V (Vgs), with a maximum power dissipation of 30W (Tc). Key electrical characteristics include an input capacitance (Ciss) of 4300pF at 10V (Vds) and a gate charge (Qg) of 48nC at 4.5V (Vgs).
The MOSFET technology employed ensures efficient switching performance. This component is housed in an 8-WDFN exposed pad package, suitable for surface mounting and operating within a junction temperature range of 150°C. Its robust specifications make it suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V |
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