NP90N06VLG-E1-AY
MOSFET N-CH 60V 90A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP90N06VLG-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This surface mount device features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 90A at 25°C (Tc). The low Rds On of 7.8mOhm @ 45A, 10V is achieved with a gate drive of 10V. It offers a maximum junction temperature of 175°C and can dissipate up to 105W (Tc) of power. Key parameters include a Gate Charge (Qg) of 135 nC @ 10V and Input Capacitance (Ciss) of 6900 pF @ 25V. The component is supplied in a TO-252-3, DPAK package, supplied on tape and reel. This MOSFET is utilized in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 105W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |