NP90N055VDG-E1-AY
MOSFET N-CH 55V 90A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation NP90N055VDG-E1-AY is an N-Channel MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 90 A at 25°C (Tc). With a low on-resistance of 6 mOhm at 45 A and 10 V (Vgs), it minimizes conduction losses. The device boasts a maximum junction temperature of 175°C and a power dissipation of 105 W (Tc), enabling robust operation in demanding thermal environments. Key parameters include a Gate Charge (Qg) of 135 nC at 10 V and an Input Capacitance (Ciss) of 6900 pF at 25 V. The NP90N055VDG-E1-AY is housed in a TO-252-3, DPAK package, suitable for surface mounting. This MOSFET finds application in power management, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 105W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
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