NP90N04VLG-E1-AY
MOSFET N-CH 40V 90A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP90N04VLG-E1-AY is a 40V N-Channel Power MOSFET designed for high-current switching applications. This TO-252 packaged device offers a continuous drain current of 90A (Tc) with a low on-resistance of 4mOhm at 45A, 10V. Key electrical characteristics include a gate charge (Qg) of 135 nC (Max) at 10V and input capacitance (Ciss) of 6900 pF (Max) at 25V. It operates at junction temperatures up to 175°C and supports a power dissipation of 105W (Tc). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 105W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
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