NP90N04VDG-E1-AY
MOSFET N-CH 40V 90A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP90N04VDG-E1-AY is a 40V N-Channel Power MOSFET designed for high-current switching applications. This component features a low on-resistance of 4mOhm at 45A and 10V Vgs, facilitating efficient power transfer. With a continuous drain current capability of 90A at 25°C (Tc) and a maximum junction temperature of 175°C, it is suited for demanding thermal environments. The device is housed in a TO-252-3 DPAK package, enabling surface mount assembly. Key electrical parameters include a gate charge of 135 nC at 10V and input capacitance of 6900 pF at 25V. This MOSFET finds application in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 105W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
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