NP90N04MUG-S18-AY
MOSFET N-CH 40V 90A TO220-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP90N04MUG-S18-AY is an N-Channel MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 90A at 25°C (Tc). The low on-resistance (Rds On) of 3mOhm at 45A and 10V gate drive ensures efficient power transfer. With a maximum junction temperature of 175°C and a substantial power dissipation capability of 217W (Tc), it is suitable for high-power switching and motor control applications. The TO-220-3 package facilitates robust through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 182nC at 10V and input capacitance (Ciss) of 11200pF at 25V. This device is commonly found in industrial automation, automotive power systems, and power supply units.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 217W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 182 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11200 pF @ 25 V |